| PART |
Description |
Maker |
| NR4510UR NR4510UR-AZ |
NECs 050 um InGaAs APD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/S APPLICATIONS
|
California Eastern Labs
|
| NR4510US NR4510US-AZ NR4510UT NR4510UT-AZ |
InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER
|
California Eastern Labs
|
| NR4510UR-15 |
φ 50 μm InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER
|
Renesas Electronics Corporation
|
| NR3510UR |
?50 μm InGaAs PIN-PD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/s APPLICATIONS
í50 レm InGaAs PIN-PD ROSA WITH INTERNAL PRE-AMPLIFIER FOR 2.5 GB/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NR4510UT |
InGaAs APD RECEIVER
|
CEL
|
| FRM5N142GW |
InGaAs-APD/Preamp Receiver
|
EUDYNA[Eudyna Devices Inc]
|
| C30659-900-R5B C30659-900-R8A C30659-1060-R8B |
Silicon and InGaAs APD Preamplifier Modules 铟镓砷硅和APD的前置放大器模块
|
PerkinElmer Inc.
PerkinElmer, Inc.
|
| FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块，用.31微米.55 UM的波长范
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| C4777-01 |
APD module APD module integrated with peripheral circuits
|
Hamamatsu Corporation
|
